6533b7dbfe1ef96bd126f78e

RESEARCH PRODUCT

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Matteo BuffoloNicola RoccatoFrancesco PivaCarlo De SantiRiccardo BrescancinClaudia CasuAlessandro CariaKalparupa MukherjeeCamille HallerJean Francois CarlinNicolas GrandjeanMarco ValloneAlberto TibaldiFrancesco BertazziMichele GoanoGiovanni VerzellesiMauro MoscaGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

subject

reliabilitygallium nitride; defects; indium; reliability; trap-assisted tunnelinggallium nitride defects indium reliability trap-assisted tunnelingindiumgallium nitrideSettore ING-INF/01 - Elettronicadefectstrap-assisted tunneling

description

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.

yearjournalcountryeditionlanguage
2022-03-04
10.1117/12.2606599http://hdl.handle.net/11577/3455439