Optical and structural studies of GaN 3D structures selectively grown by MOCVD

Abstract This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D structure growth occurs by simply feeding the reactor gas phase with a conventional flow of metal-organic (MO), trimethyl-gallium (TMGa) molecules. Selectivity occurs at the substrate surface in which MO species travel tens of micrometers in order to build up the 3D structure. After the growth, these structures are nitrided in order to give GaN-related optical visible emission. Optical emission results are presented and discussed in this paper. Both 3D structures deposition and annealing experiments can be extended to other III–V m…