6533b7dbfe1ef96bd126fe19

RESEARCH PRODUCT

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

R. HerinoF. DonatiniJ. GodfroydPatrice L. BaldeckA. Duc-maugéIsabelle ColombierPierre VisteM. SacilottiJ.c. VialY. Lacroute

subject

Scanning electron microscopeAnnealing (metallurgy)business.industryChemistryMineralogyCathodoluminescenceChemical vapor depositionCondensed Matter PhysicsInorganic ChemistryX-ray crystallographyMaterials ChemistryOptoelectronicsMetalorganic vapour phase epitaxyEmission spectrumbusinessNitriding

description

Abstract This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D structure growth occurs by simply feeding the reactor gas phase with a conventional flow of metal-organic (MO), trimethyl-gallium (TMGa) molecules. Selectivity occurs at the substrate surface in which MO species travel tens of micrometers in order to build up the 3D structure. After the growth, these structures are nitrided in order to give GaN-related optical visible emission. Optical emission results are presented and discussed in this paper. Both 3D structures deposition and annealing experiments can be extended to other III–V materials.

yearjournalcountryeditionlanguage
2004-12-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2004.09.002