0000000000371026

AUTHOR

Patrice L. Baldeck

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

Abstract This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D structure growth occurs by simply feeding the reactor gas phase with a conventional flow of metal-organic (MO), trimethyl-gallium (TMGa) molecules. Selectivity occurs at the substrate surface in which MO species travel tens of micrometers in order to build up the 3D structure. After the growth, these structures are nitrided in order to give GaN-related optical visible emission. Optical emission results are presented and discussed in this paper. Both 3D structures deposition and annealing experiments can be extended to other III–V m…

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On the origin of controlled anisotropic growth of monodisperse gold nanobipyramids

We elucidate the crucial role of the cetyl trimethylammonium bromide (CTAB) surfactant in the anisotropic growth mechanism of gold nano-bipyramids, nano-objects with remarkable optical properties and high tunability. Atomistic molecular dynamics simulations predict different surface coverages of the CTAB (positively charged) heads and their (bromide) counterions as function of the gold exposed surfaces. High concentration of CTAB surfactant promotes formation of gold nanograins in solution that work as precursors for the smooth anisotropic growth of more elongated nano-bipyramidal objects. Nanobipyramids feature higher index facets with respect to nanorods, allowing higher CTAB coverages th…

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MOVPE growth of Ga 3D structures for fabrication of GaN materials

Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metal…

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