6533b820fe1ef96bd127990b

RESEARCH PRODUCT

MOVPE growth of Ga 3D structures for fabrication of GaN materials

M. SacilottiSylvie BourgeoisJean DecobertIsabelle ColombierC. DumasPatrice L. BaldeckLuc Imhoff

subject

Materials scienceFabricationSiliconbusiness.industryAnnealing (metallurgy)Scanning electron microscopechemistry.chemical_elementCondensed Matter Physicslaw.inventionInorganic ChemistryMetalOpticschemistryOptical microscopeChemical engineeringlawvisual_artMaterials Chemistryvisual_art.visual_art_mediumMetalorganic vapour phase epitaxyGalliumbusiness

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Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metallic growth was obtained with our growth conditions. Some discussions about the growth mechanism are also presented. The Ga 3D nitridation process was carried out by annealing under NH 3 between 650°C and 750°C, far below the conventional nitridation temperature in MOVPE. Preliminary X-ray diffraction results show that a GaN-like structure can be obtained at such low nitridation temperature.

yearjournalcountryeditionlanguage
2004-01-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2003.11.065