0000000000146724
AUTHOR
Jean Decobert
showing 4 related works from this author
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
2004
Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…
Growth of nanometric CuGaxOystructures on copper substrates
2005
This paper presents an alternative method based on the metal–organic chemical vapour deposition technique to obtain new nanowire structures. Here, the metal–organic precursor acts as a catalyst and interacts with a metallic substrate to produce 3D structures such as nanowires. In the present case, trimethyl gallium interacts with a copper metallic substrate to build a single-crystalline CuGaxOy wire structure. Electronic microscopy techniques on image or diffraction modes have provided the structural and chemical characterization of the obtained nanowires.
MOVPE growth of Ga 3D structures for fabrication of GaN materials
2004
Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metal…
All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity
2006
International audience; A vertical-access passive all-optical gate has been used to improve the extinction ratio of a 160 GHz pico-second pulse train at 1555 nm. An extinction ratio enhancement of 6 dB is observed within an 8 nm bandwidth. Such a device is a promising candidate for low-cost all optical reamplication and reshaping (211) regeneration at 160 Gbits/s.