6533b7d1fe1ef96bd125ca5f

RESEARCH PRODUCT

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

H. SikG. PostJean DecobertM. SacilottiPierre VisteGilles PatriarcheC. Dumas

subject

Materials sciencebusiness.industryNanowireNanotechnologyChemical vapor depositionCondensed Matter PhysicsInorganic ChemistryMicrometreNano-Materials ChemistryOptoelectronicsMetalorganic vapour phase epitaxyCrystalliteVapor–liquid–solid methodbusinessSingle crystal

description

Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the VLS model, is also presented.

yearjournalcountryeditionlanguage
2004-12-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2004.08.114