0000000000146727
AUTHOR
C. Dumas
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…
MOVPE growth of Ga 3D structures for fabrication of GaN materials
Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metal…
Crystal growth and hysteresis phenomena of rubidium tetrachlorozincate Rb2ZnCl4
Abstract Phase transitions in Rb2ZnCl4 crystals grown by various methods are examined with differential scanning calorimetry and dielectric measurements. For most of the studied samples the permittivity along the ferroelectric axis shows a large thermal hysteresis over a wide temperature range including the incommensurate phase and the lock-in point. This hysteresis depends on the presence of different defects which appear during crystal growth or after a thermal and mechanical treatment. It is shown that dielectric measurements are quite well suited to characterize the crystals exhibiting on incommensurate phase and a ferroelectric phase.