0000000000146725
AUTHOR
Pierre Viste
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…
Optical and structural studies of GaN 3D structures selectively grown by MOCVD
Abstract This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D structure growth occurs by simply feeding the reactor gas phase with a conventional flow of metal-organic (MO), trimethyl-gallium (TMGa) molecules. Selectivity occurs at the substrate surface in which MO species travel tens of micrometers in order to build up the 3D structure. After the growth, these structures are nitrided in order to give GaN-related optical visible emission. Optical emission results are presented and discussed in this paper. Both 3D structures deposition and annealing experiments can be extended to other III–V m…