Search results for "Gallium"
showing 10 items of 265 documents
CCDC 906037: Experimental Crystal Structure Determination
2013
Related Article: B.P.Waldron, D.Parker, C.Burchardt, D.S.Yufit, M.Zimny, F.Roesch|2013|Chem.Commun.|49|579|doi:10.1039/c2cc37544c
CCDC 906038: Experimental Crystal Structure Determination
2013
Related Article: B.P.Waldron, D.Parker, C.Burchardt, D.S.Yufit, M.Zimny, F.Roesch|2013|Chem.Commun.|49|579|doi:10.1039/c2cc37544c
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
AMD3100: A Versatile Platform for CXCR4 Targeting 68 Ga-Based Radiopharmaceuticals
2016
International audience; CXCR4 is a G protein-coupled receptor (GPCR), which is overexpressed in numerous diseases, particularly in multiple cancers. Therefore, this receptor represents a valuable target for imaging and therapeutic purposes. Among the different approaches, which were developed for CXCR4 imaging, a CXCR4 antagonist biscyclam system (AMD3100, also called Mozobil), currently used in the clinic for the mobilization of hematopoietic stem cells, was radiolabeled with different radiometals such as 62Zn, 64Cu, 67Ga, or 99mTc. However, cyclam is not an ideal chelator for most of these radiometals, and could lead to the release of the radionuclide in vivo. In the current study, a new …
Quantum well intermixing in GaInNAs/GaAs structures
2003
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …
Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors
2004
We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…
Light-induced transmission nonlinearities in gallium selenide
1999
The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures. Chantal.Ferrer@uv.es ; Jaqueline.Bouvier@uv.es ; Miguel.Andres@…