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RESEARCH PRODUCT

Quantum well intermixing in GaInNAs/GaAs structures

Roberto MacalusoHandong SunF. RobertJingyu LinMartin D. DawsonL. GrenouilletStephane CalvezJohn H. MarshHongxing JiangK. B. NamP. GiletA. MillionA.c. Bryce

subject

:Science::Physics::Optics and light [DRNTU]Materials sciencePhotoluminescencebusiness.industryAlloyGeneral Physics and Astronomyengineering.materialSettore ING-INF/01 - ElettronicaBlueshiftGallium arsenidechemistry.chemical_compoundchemistrySputteringQuantum well intermixing GaInNAsengineeringOptoelectronicsRapid thermal annealingbusinessSaturation (magnetic)Quantum well

description

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. Published version

yearjournalcountryeditionlanguage
2003-01-01
10.1063/1.1627950http://hdl.handle.net/10220/6062