0000000001217003

AUTHOR

Hongxing Jiang

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Quantum well intermixing in GaInNAs/GaAs structures

2003

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …

:Science::Physics::Optics and light [DRNTU]Materials sciencePhotoluminescencebusiness.industryAlloyGeneral Physics and Astronomyengineering.materialSettore ING-INF/01 - ElettronicaBlueshiftGallium arsenidechemistry.chemical_compoundchemistrySputteringQuantum well intermixing GaInNAsengineeringOptoelectronicsRapid thermal annealingbusinessSaturation (magnetic)Quantum well
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