6533b7dcfe1ef96bd127351c

RESEARCH PRODUCT

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Marco CannasIldikó CoraAlessandra AlbertiFabrizio RoccaforteBéla PéczFerdinando IucolanoFilippo GiannazzoGiuseppe GrecoMonia SperaMonia Spera

subject

010302 applied physicsMaterials scienceCondensed matter physicsMechanical EngineeringSchottky barrierSchottky diodeGallium nitride02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciencesFree standing GaNchemistry.chemical_compoundQuality (physics)chemistryMechanics of MaterialsNi/GaN interface0103 physical sciencesGeneral Materials ScienceBarrier spatial inhomogeneity0210 nano-technologySchottky barrier

description

Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

yearjournalcountryeditionlanguage
2019-05-01
10.1016/j.mssp.2019.01.036http://hdl.handle.net/10447/350356