0000000000038455
AUTHOR
Monia Spera
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30-200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10(20) at/cm(3). The implanted samples were annealed at high temperatures (1675-1825 degrees C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 degrees C, while this increase becomes more significant at 1825 degrees C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34 x 10(18)/cm(3) and m…
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Environment assisted photoconversion of luminescent surface defects in SiO 2 nanoparticles
Abstract Time-resolved photoluminescence investigation on SiO 2 nanoparticles was carried out in controlled atmosphere, with the aim to discern the effects induced on the typical blue luminescence band by high power UV Nd:YAG laser photons (4.66 eV) and by some selected molecular species of the air (O 2 , N 2 , CO 2 , H 2 O). These factors ultimately determine both the brightness and photostability of the emitting defect, so as to limit the unique and attracting potentialities offered by this system in many applicative fields. Here it is highlighted that the effects due to photons and molecules, singularly considered, are not additive, the radiation being more dramatic in reducing the emiss…
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °