6533b822fe1ef96bd127ce59

RESEARCH PRODUCT

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Silvia ScaleseFilippo GiannazzoGiuseppe GrecoMonia SperaFabrizio RoccaforteMarco CannasRaffaella Lo NigroCorrado Bongiorno

subject

Control and OptimizationMaterials scienceAnnealing (metallurgy)Analytical chemistryEnergy Engineering and Power Technology02 engineering and technologylcsh:Technology01 natural sciencesCondensed Matter::Materials ScienceAlGaN/GaNTa/Al/TaTi/Al/Ti0103 physical sciencesElectrical and Electronic EngineeringEngineering (miscellaneous)Ohmic contact010302 applied physicslcsh:TBarrier heightRenewable Energy Sustainability and the Environmentbusiness.industryContact resistanceohmic contactsHeterojunctionConductive atomic force microscopyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnologyMicrostructureOhmic contactSemiconductor0210 nano-technologybusinessEnergy (miscellaneous)Hillock

description

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 &deg

yearjournalcountryeditionlanguage
2019-07-10Energies
https://doi.org/10.3390/en12142655