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RESEARCH PRODUCT
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Monia SperaMonia SperaAndrea SeverinoAngelo Alberto MessinaSalvatore Di FrancoGiuseppe GrecoFabrizio RoccaforteFilippo GiannazzoDomenico Corsosubject
FabricationMaterials science4H-SiCAnnealing (metallurgy)02 engineering and technology01 natural scienceslcsh:TechnologyArticlechemistry.chemical_compound0103 physical sciencesSilicon carbideGeneral Materials ScienceComposite materiallcsh:MicroscopyOhmic contactlcsh:QC120-168.85010302 applied physicsion-implantationDopantlcsh:QH201-278.5lcsh:TContact resistanceohmic contacts021001 nanoscience & nanotechnologyAcceptor3. Good healthIon implantationchemistrylcsh:TA1-2040lcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineering0210 nano-technologylcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971description
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-10-23 | Materials |