0000000000038458

AUTHOR

Domenico Corso

showing 3 related works from this author

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

2019

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30-200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10(20) at/cm(3). The implanted samples were annealed at high temperatures (1675-1825 degrees C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 degrees C, while this increase becomes more significant at 1825 degrees C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34 x 10(18)/cm(3) and m…

4H-SiCMaterials scienceFabricationAnnealing (metallurgy)Analytical chemistrychemistry.chemical_element02 engineering and technologyActivation energy01 natural sciencesIonAluminium0103 physical sciencesSurface roughnessGeneral Materials ScienceElectrical measurements010302 applied physicsCondensed Matter - Materials ScienceMechanical EngineeringPhysics - Applied Physics021001 nanoscience & nanotechnologyCondensed Matter PhysicsAcceptorPost implantation annealingchemistryMechanics of MaterialsElectrical activationp-type implantation0210 nano-technologyMaterials Science in Semiconductor Processing
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Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

2018

This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…

Materials scienceAnnealing (metallurgy)Algan gan02 engineering and technology01 natural sciencesMetal0103 physical sciencesAlGaN/GaN heterostructuresGeneral Materials ScienceComposite materialOhmic contactSheet resistanceOhmic contacts010302 applied physicsbusiness.industryMechanical EngineeringContact resistanceTransmission Line ModelHeterojunction021001 nanoscience & nanotechnologyCondensed Matter PhysicsSemiconductorMechanics of Materialsvisual_artvisual_art.visual_art_mediumTi/Al/Ni/Au0210 nano-technologybusiness
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Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

2019

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 &deg

FabricationMaterials science4H-SiCAnnealing (metallurgy)02 engineering and technology01 natural scienceslcsh:TechnologyArticlechemistry.chemical_compound0103 physical sciencesSilicon carbideGeneral Materials ScienceComposite materiallcsh:MicroscopyOhmic contactlcsh:QC120-168.85010302 applied physicsion-implantationDopantlcsh:QH201-278.5lcsh:TContact resistanceohmic contacts021001 nanoscience & nanotechnologyAcceptor3. Good healthIon implantationchemistrylcsh:TA1-2040lcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineering0210 nano-technologylcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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