0000000000371130
AUTHOR
Kozo Atobe
Radiation induced luminescence processes in c-BN
Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.
Luminescence mechanisms of oxygen-related defects in AlN
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.
Spectral Characteristics of Native Defects in BN
Spectral characteristics of native defects from the crystalline lattice of c-BN were studied. It is found that the photoluminescence (PL) spectrum under exposure to ultraviolet-blue light has a complex structure containing a predominant wide 2.5 eV luminescence band at room temperature. The photostimulated luminescence (PSL) consists of a band, which is coincident with the 2.5 eV PL. The results obtained allow to conclude that the same defects are responsible for both the PL and PSL formation.