0000000000371344

AUTHOR

Mengxi Wang

showing 3 related works from this author

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt …

2020

Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½Advanced Electronic Materials
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Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

2019

We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...

Strain engineeringMaterials scienceCondensed matter physicsStrain (chemistry)Materials ChemistryElectrochemistryStackingSpin valveGiant magnetoresistanceShape-memory alloyElectronic Optical and Magnetic MaterialsSpin-½ACS Applied Electronic Materials
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Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

2020

MagnetizationMaterials scienceCondensed matter physicsPerpendicular magnetic anisotropyElectric fieldMultiferroicsHeterojunctionCurrent (fluid)Spin orbit torqueElectronic Optical and Magnetic MaterialsAdvanced Electronic Materials
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