6533b7dbfe1ef96bd126ff03

RESEARCH PRODUCT

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure

Gehard JakobJikun ChenQi LiuMengxi WangKangkang MengYong JiangPengfei LiuKaiyou WangXiaoguang XuZ. Y. RenJun Miao

subject

Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½https://doi.org/10.1002/aelm.202000102