6533b7dbfe1ef96bd126ff03
RESEARCH PRODUCT
Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure
Gehard JakobJikun ChenQi LiuMengxi WangKangkang MengYong JiangPengfei LiuKaiyou WangXiaoguang XuZ. Y. RenJun Miaosubject
Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½year | journal | country | edition | language |
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2020-04-20 | Advanced Electronic Materials |