Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts

In this work we study the evolution of intrinsic domain wall magnetoresistance (DWMR) with domain wall confinement. Clean permalloy notched half-ring nanocontacts are fabricated using a special ultra-high vacuum electromigration procedure to tailor the size of the wire in-situ and through the resulting domain wall confinement we tailor the domain wall width from a few tens of nm down to a few nm. Through measurements of the dependence of the resistance with respect to the applied field direction we extract the contribution of a single domain wall to the MR of the device, as a function of the domain wall width in the confining potential at the notch. In this size range, an intrinsic positive…

Tailoring large magnetoresistance in Dirac semimetal SrIrO3 films

Perovskite SrIrO3 is a special Dirac material with fascinating effects due to its strong electron correlation and spin–orbit coupling. In this work, a large magnetoresistance (MR) was observed not only in epitaxial SrIrO3 films but also in a SrIrO3/PbZr0.2Ti0.8O3 epitaxial heterostructure with a magnetic field applied perpendicular to the external electric field. The magnetoresistance of SrIrO3 (10 nm) and SrIrO3/PbZr0.2Ti0.8O3 (10 nm/30 nm) reach values as large as 40% and 110% at 9 T and 5 K, respectively. We believe that the unusual magnetoresistance is from the Dirac/Weyl state. Especially, the SrIrO3/PbZr0.2Ti0.8O3 bilayer shows negative magnetoresistance with strong oscillations close…

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure

Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...

Strain-mediated electric-field control of exchange bias in a Co90Fe10/BiFeO3/SrRuO3/PMN-PT heterostructure.

AbstractThe electric-field (E-field) controlled exchange bias (EB) in a Co90Fe10/BiFeO3 (BFO)/SrRuO3/PMN-PT heterostructure has been investigated under different tensile strain states. The in-plane tensile strain of the BFO film is changed from +0.52% to +0.43% as a result of external E-field applied to the PMN-PT substrate. An obvious change of EB by the control of non-volatile strain has been observed. A magnetization reversal driven by E-field has been observed in the absence of magnetic field. Our results indicate that a reversible non-volatile E-field control of a ferromagnetic layer through strain modulated multiferroic BFO could be achieved at room temperature.

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Magnetic Coupling in Y3Fe5O12/Gd3Fe5O12 Heterostructures

Ferrimagnetic ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low damping. By substituting the yttrium with rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$/${\mathrm{Gd}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG/GIG) heterostructures grown by pulsed laser deposition. From bulk sensitive magnetometry and surface sensitive spin Seebeck effect and spin Hall magnetoresistance measurements, we determine the alignment of the heterostruct…

Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations

Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …