0000000000291805

AUTHOR

Kangkang Meng

showing 5 related works from this author

Tailoring large magnetoresistance in Dirac semimetal SrIrO3 films

2021

Perovskite SrIrO3 is a special Dirac material with fascinating effects due to its strong electron correlation and spin–orbit coupling. In this work, a large magnetoresistance (MR) was observed not only in epitaxial SrIrO3 films but also in a SrIrO3/PbZr0.2Ti0.8O3 epitaxial heterostructure with a magnetic field applied perpendicular to the external electric field. The magnetoresistance of SrIrO3 (10 nm) and SrIrO3/PbZr0.2Ti0.8O3 (10 nm/30 nm) reach values as large as 40% and 110% at 9 T and 5 K, respectively. We believe that the unusual magnetoresistance is from the Dirac/Weyl state. Especially, the SrIrO3/PbZr0.2Ti0.8O3 bilayer shows negative magnetoresistance with strong oscillations close…

PhysicsChiral anomalyCondensed Matter::Materials SciencePolarization densityPhysics and Astronomy (miscellaneous)Field (physics)Condensed matter physicsMagnetoresistanceElectric fieldDirac (software)FerroelectricityMagnetic fieldApplied Physics Letters
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Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt …

2020

Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½Advanced Electronic Materials
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Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

2019

We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...

Strain engineeringMaterials scienceCondensed matter physicsStrain (chemistry)Materials ChemistryElectrochemistryStackingSpin valveGiant magnetoresistanceShape-memory alloyElectronic Optical and Magnetic MaterialsSpin-½ACS Applied Electronic Materials
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Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

2020

MagnetizationMaterials scienceCondensed matter physicsPerpendicular magnetic anisotropyElectric fieldMultiferroicsHeterojunctionCurrent (fluid)Spin orbit torqueElectronic Optical and Magnetic MaterialsAdvanced Electronic Materials
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Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations

2018

Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …

Materials sciencePhysics and Astronomy (miscellaneous)SpintronicsCondensed matter physicsCondensed Matter::OtherMagnetismMagnetic storageHeterojunction02 engineering and technologyCoercivity021001 nanoscience & nanotechnologyPolarization (waves)01 natural scienceslaw.inventionCondensed Matter::Materials SciencelawHall effect0103 physical sciencesMultiferroics010306 general physics0210 nano-technologyApplied Physics Letters
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