0000000000371346

AUTHOR

Xiaoguang Xu

showing 5 related works from this author

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt …

2020

Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½Advanced Electronic Materials
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Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

2019

We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...

Strain engineeringMaterials scienceCondensed matter physicsStrain (chemistry)Materials ChemistryElectrochemistryStackingSpin valveGiant magnetoresistanceShape-memory alloyElectronic Optical and Magnetic MaterialsSpin-½ACS Applied Electronic Materials
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Strain-mediated electric-field control of exchange bias in a Co90Fe10/BiFeO3/SrRuO3/PMN-PT heterostructure.

2015

AbstractThe electric-field (E-field) controlled exchange bias (EB) in a Co90Fe10/BiFeO3 (BFO)/SrRuO3/PMN-PT heterostructure has been investigated under different tensile strain states. The in-plane tensile strain of the BFO film is changed from +0.52% to +0.43% as a result of external E-field applied to the PMN-PT substrate. An obvious change of EB by the control of non-volatile strain has been observed. A magnetization reversal driven by E-field has been observed in the absence of magnetic field. Our results indicate that a reversible non-volatile E-field control of a ferromagnetic layer through strain modulated multiferroic BFO could be achieved at room temperature.

MultidisciplinaryExchange biasMaterials scienceFerromagnetismCondensed matter physicsStrain (chemistry)Electric fieldMultiferroicsHeterojunctionSubstrate (electronics)BioinformaticsArticleMagnetic fieldScientific reports
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Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

2020

MagnetizationMaterials scienceCondensed matter physicsPerpendicular magnetic anisotropyElectric fieldMultiferroicsHeterojunctionCurrent (fluid)Spin orbit torqueElectronic Optical and Magnetic MaterialsAdvanced Electronic Materials
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Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations

2018

Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …

Materials sciencePhysics and Astronomy (miscellaneous)SpintronicsCondensed matter physicsCondensed Matter::OtherMagnetismMagnetic storageHeterojunction02 engineering and technologyCoercivity021001 nanoscience & nanotechnologyPolarization (waves)01 natural scienceslaw.inventionCondensed Matter::Materials SciencelawHall effect0103 physical sciencesMultiferroics010306 general physics0210 nano-technologyApplied Physics Letters
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