0000000000371347
AUTHOR
Z. Y. Ren
Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure
Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures
Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations
Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …