0000000000377311

AUTHOR

John-mark Hopkins

showing 2 related works from this author

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

2004

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Optical amplifierMaterials sciencePhotoluminescenceVideodisksbusiness.industryDopingSurface emitting lasersCondensed Matter PhysicsDistributed Bragg reflectorLaserSemiconductor laser theoryVertical-cavity surface-emitting laserlaw.inventionInorganic ChemistryOptical pumpingsemiconductor diskOpticslawMaterials ChemistryOptoelectronicsbusinessJournal of Crystal Growth
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1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

2003

A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.

Quantum opticsOptical amplifierMaterials scienceApplied physicsbusiness.industryBandwidth (signal processing)VCSOA GaInNAsOptical pumpingOpticsSemiconductorOptoelectronicsElectrical and Electronic EngineeringPhotonicsbusiness
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