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RESEARCH PRODUCT
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
Martin D. DawsonS.a. SmithT. JouhtiHandong SunT. F. BoggessKimberley C. HallStephane CalvezKenan GundogduRoberto MacalusoM. PessaJohn-mark HopkinsA.h. Clarksubject
Optical amplifierMaterials sciencePhotoluminescenceVideodisksbusiness.industryDopingSurface emitting lasersCondensed Matter PhysicsDistributed Bragg reflectorLaserSemiconductor laser theoryVertical-cavity surface-emitting laserlaw.inventionInorganic ChemistryOptical pumpingsemiconductor diskOpticslawMaterials ChemistryOptoelectronicsbusinessdescription
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-08-01 | Journal of Crystal Growth |