0000000000377304

AUTHOR

T. Jouhti

showing 4 related works from this author

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

2004

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Optical amplifierMaterials sciencePhotoluminescenceVideodisksbusiness.industryDopingSurface emitting lasersCondensed Matter PhysicsDistributed Bragg reflectorLaserSemiconductor laser theoryVertical-cavity surface-emitting laserlaw.inventionInorganic ChemistryOptical pumpingsemiconductor diskOpticslawMaterials ChemistryOptoelectronicsbusinessJournal of Crystal Growth
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Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

2004

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…

:Science::Physics::Optics and light [DRNTU]PhotoluminescenceMaterials scienceCondensed Matter::Otherbusiness.industrychemical beamPhysics::OpticsGeneral Physics and AstronomyNonlinear opticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDistributed Bragg reflectorBlueshiftGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryOptoelectronicsSemiconducting galliumRapid thermal annealingbusinessSemiconductor quantum wellsRefractive indexQuantum wellJournal of Applied Physics
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1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

2003

A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.

Quantum opticsOptical amplifierMaterials scienceApplied physicsbusiness.industryBandwidth (signal processing)VCSOA GaInNAsOptical pumpingOpticsSemiconductorOptoelectronicsElectrical and Electronic EngineeringPhotonicsbusiness
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Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

2004

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented a…

Optical amplifier:Science::Physics::Optics and light [DRNTU]Materials scienceExtinction ratiobusiness.industryLaser pumpingCondensed Matter PhysicsLaserOptical switchAtomic and Molecular Physics and Opticslaw.inventionVertical-cavity surface-emitting laserSemiconductor laser theoryOptical pumpingOpticslawOptoelectronicsElectrical and Electronic Engineeringbusiness
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