6533b86cfe1ef96bd12c82ea
RESEARCH PRODUCT
Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers
Handong SunRoberto MacalusoT. JouhtiMartin D. DawsonJ. KontinnenM. PessaNicolas LaurandA.h. ClarkStephane Calvezsubject
Optical amplifier:Science::Physics::Optics and light [DRNTU]Materials scienceExtinction ratiobusiness.industryLaser pumpingCondensed Matter PhysicsLaserOptical switchAtomic and Molecular Physics and Opticslaw.inventionVertical-cavity surface-emitting laserSemiconductor laser theoryOptical pumpingOpticslawOptoelectronicsElectrical and Electronic Engineeringbusinessdescription
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported. Published version
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-07-01 |