0000000000377312
AUTHOR
A.h. Clark
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.
Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented a…