0000000000395245
AUTHOR
Alexey Belov
Field- and irradiation-induced phenomena in memristive nanomaterials
The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …
Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network
Abstract We investigate the constructive role of an external noise signal, in the form of a low-rate Poisson sequence of pulses supplied to all inputs of a spiking neural network, consisting in maintaining for a long time or even recovering a memory trace (engram) of the image without its direct renewal (or rewriting). In particular, this unique dynamic property is demonstrated in a single-layer spiking neural network consisting of simple integrate-and-fire neurons and memristive synaptic weights. This is carried out by preserving and even fine-tuning the conductance values of memristors in terms of dynamic plasticity, specifically spike-timing-dependent plasticity-type, driven by overlappi…
Stochastic resonance in a metal-oxide memristive device
Abstract The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities…
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaussian noise voltage signal. We have found that the memristor switches between the low resistance state and the high resistance state in a random telegraphic signal (RTS) mode. The effective potential profile of the memristor shows from two to three local minima and depends on the input noise parameters and the memristor operation. These observations indicate the multiplicative character of the noise on the dynamical behavior of the memristor, that is the noise perceived by the memristor depends on the state of the system and its electrical properties are influenced by the noise signal. The det…
Nonstationary distributions and relaxation times in a stochastic model of memristor
We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluct…