0000000000414432
AUTHOR
G. Chaumont
showing 1 related works from this author
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.