0000000000414432

AUTHOR

G. Chaumont

showing 1 related works from this author

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

2012

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Nuclear and High Energy PhysicsSpace technologyMaterials scienceta114Dielectric strengthbusiness.industryElectrical engineeringFailure rateHardware_PERFORMANCEANDRELIABILITYlaw.inventionCapacitorNuclear Energy and EngineeringlawGate oxideMOSFETHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessRadiation hardeningHardware_LOGICDESIGNIEEE Transactions on Nuclear Science
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