6533b7ddfe1ef96bd12749f3
RESEARCH PRODUCT
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
Michele MuschitielloB. EisenerN. IkedaVeronique Ferlet-cavroisS. GamerithFrancesco PintacudaC. BinoisAli MohammadzadehM. InoueMarty R. ShaneyfeltJ.r. SchwankChristian PoiveyArto JavanainenA. CarvalhoRaymond L. LadburyG. ChaumontJ-m Lauensteinsubject
Nuclear and High Energy PhysicsSpace technologyMaterials scienceta114Dielectric strengthbusiness.industryElectrical engineeringFailure rateHardware_PERFORMANCEANDRELIABILITYlaw.inventionCapacitorNuclear Energy and EngineeringlawGate oxideMOSFETHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessRadiation hardeningHardware_LOGICDESIGNdescription
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-12-01 | IEEE Transactions on Nuclear Science |