0000000000414429

AUTHOR

J.r. Schwank

showing 2 related works from this author

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

2012

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Nuclear and High Energy PhysicsSpace technologyMaterials scienceta114Dielectric strengthbusiness.industryElectrical engineeringFailure rateHardware_PERFORMANCEANDRELIABILITYlaw.inventionCapacitorNuclear Energy and EngineeringlawGate oxideMOSFETHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessRadiation hardeningHardware_LOGICDESIGNIEEE Transactions on Nuclear Science
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Heavy-Ion Induced Charge Yield in MOSFETs

2009

The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.

Nuclear and High Energy PhysicsRange (particle radiation)Yield (engineering)Materials scienceAstrophysics::High Energy Astrophysical PhenomenaCharge (physics)Electronequipment and suppliesIonNuclear Energy and EngineeringElectric fieldMOSFETElectrical and Electronic EngineeringAtomic physicsVoltageIEEE Transactions on Nuclear Science
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