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RESEARCH PRODUCT
Heavy-Ion Induced Charge Yield in MOSFETs
Heikki KettunenArto JavanainenMarty R. ShaneyfeltScott M. DaltonReno Harboe-sorensenAri VirtanenJ.r. SchwankAleksandar B. JakšićPaul E. Doddsubject
Nuclear and High Energy PhysicsRange (particle radiation)Yield (engineering)Materials scienceAstrophysics::High Energy Astrophysical PhenomenaCharge (physics)Electronequipment and suppliesIonNuclear Energy and EngineeringElectric fieldMOSFETElectrical and Electronic EngineeringAtomic physicsVoltagedescription
The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-12-01 | IEEE Transactions on Nuclear Science |