0000000000414428

AUTHOR

Ali Mohammadzadeh

showing 5 related works from this author

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

2012

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Nuclear and High Energy PhysicsSpace technologyMaterials scienceta114Dielectric strengthbusiness.industryElectrical engineeringFailure rateHardware_PERFORMANCEANDRELIABILITYlaw.inventionCapacitorNuclear Energy and EngineeringlawGate oxideMOSFETHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic EngineeringPower MOSFETbusinessRadiation hardeningHardware_LOGICDESIGNIEEE Transactions on Nuclear Science
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High-Energy Electron-Induced SEUs and Jovian Environment Impact

2017

We present experimental evidence of electron-induced upsets in a reference European Space Agency (ESA) single event upset (SEU) monitor, induced by a 200-MeV electron beam at the Very energetic Electronic facility for Space Planetary Exploration in harsh Radiation environments facility at CERN. Comparison of experimental cross sections and simulated cross sections is shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons, flash effects, and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. The ESA Jupiter Icy Moons Explorer mission, to be launched in 2022, presents a challenging radiat…

Nuclear and High Energy Physics02 engineering and technologyRadiationspace technologyelektronit01 natural sciencesUpsetJovianNuclear physicsJupitersymbols.namesakeradiation physics0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectrical and Electronic EngineeringavaruustekniikkaPhysicsSpacecraftta114010308 nuclear & particles physicsbusiness.industryionising radiationionisoiva säteilyelectrons020202 computer hardware & architectureNuclear Energy and EngineeringsäteilyfysiikkaSingle event upsetVan Allen radiation beltPhysics::Space PhysicsElectromagnetic shieldingsymbolsAstrophysics::Earth and Planetary AstrophysicsAtomic physicsbusinessIEEE Transactions on Nuclear Science
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SEE on Different Layers of Stacked-SRAMs

2015

International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The …

Nuclear and High Energy PhysicsSEE rateMaterials scienceProtonDiceRadiationLow energyProton radiation90 nmElectronic engineering90 nmStatic random-access memoryElectrical and Electronic Engineeringradiation testingstacked dice[PHYS]Physics [physics]single event upset (SEU)ta213ta114business.industrymultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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Influence of beam conditions and energy for SEE testing

2012

GANIL/Applications industrielles; The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles: SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing to high fluence levels is required to detect rare events. This increases the probability of nuclear interactions. This is typically the case for power MOSFETs, which are tested at high fluences for single event burnout or gate rupture detection, and for single-event-upset (SEU) measurement in SRAMs below the direct ionization threshold. Differences between various test conditions (…

Nuclear and High Energy PhysicsMaterials scienceIon beamPopulationchemistry.chemical_elementPower MOSFETsIonOpticsXenonIonizationion beam energyStatic random-access memoryElectrical and Electronic Engineeringspecie effectPower MOSFETeducationShadow mappingPhysicseducation.field_of_studyRange (particle radiation)power MOSFETta114business.industrySRAMNuclear Energy and EngineeringOrders of magnitude (time)chemistry[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Atomic physicsspecies effectSRAM.businessBeam (structure)Energy (signal processing)Voltage2011 12th European Conference on Radiation and Its Effects on Components and Systems
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Automatic Relative Radiometric Normalization of Bi-Temporal Satellite Images Using a Coarse-to-Fine Pseudo-Invariant Features Selection and Fuzzy Int…

2022

Relative radiometric normalization (RRN) is important for pre-processing and analyzing multitemporal remote sensing (RS) images. Multitemporal RS images usually include different land use/land cover (LULC) types; therefore, considering an identical linear relationship during RRN modeling may result in potential errors in the RRN results. To resolve this issue, we proposed a new automatic RRN technique that efficiently selects the clustered pseudo-invariant features (PIFs) through a coarse-to-fine strategy and uses them in a fusion-based RRN modeling approach. In the coarse stage, an efficient difference index was first generated from the down-sampled reference and target images by combining…

VDP::Teknologi: 500General Earth and Planetary Sciencesmulti-temporal satellite imagesrelative radiometric normalization (RRN)change detectionimage fusionpseudo-invariant features (PIFs)Remote Sensing
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