6533b85bfe1ef96bd12bb4ad
RESEARCH PRODUCT
SEE on Different Layers of Stacked-SRAMs
Georgios TsiligiannisArto JavanainenFrédéric SaignéFrédéric WrobelHelmut PuchnerAlexandre Louis BosserMathias RousseletViyas GuptaAli MohammadzadehAri VirtanenLuigi Dilillosubject
Nuclear and High Energy PhysicsSEE rateMaterials scienceProtonDiceRadiationLow energyProton radiation90 nmElectronic engineering90 nmStatic random-access memoryElectrical and Electronic Engineeringradiation testingstacked dice[PHYS]Physics [physics]single event upset (SEU)ta213ta114business.industrymultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingdescription
International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The impact of the stacked structure on the proton SEE rate is investigated.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-12-17 | IEEE Transactions on Nuclear Science |