0000000000427227
AUTHOR
A. Remón
Photoluminescence study of radiative transitions in ZnTe bulk crystals
Abstract This paper focuses on photoluminescence (PL) and selective photoluminescence (SPL) of ZnTe bulk crystals grown by the cold traveling heater method. The crystals exhibit a PL response with a much more intense excitonic zone than the one due to free-to-bound and donor–acceptor bands, denoting a good sample quality. In particular, we have investigated the Y 1 and Y 2 peaks which, in epitaxial layers, have usually been associated with structural defects. On bulk samples they have not been detected so far because of different masked mechanisms. SPL measurements show that the electrons are the most likely involved carriers for this emission. Additionally, the analysis of the PL variation…
Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystals
Samples of zinc telluride bulk single crystals, which were deformed in uniaxial compression, have been studied by photoluminescence (PL) and cathodoluminescence (CL). As a particular feature the deformed samples present a PL emission band peaked at 603 nm, whose intensity increases as the plastic deformation does. This band is related to the density of dislocations produced during the interaction of slip systems. This hypothesis is supported by CL images. which reveal the activation of the successive slip systems corresponding to different levels of deformation.
Effect of plastic deformation on photoluminescence of ZnTe bulk monocrystals
Abstract In this work ZnTe bulk single crystals have been deformed by axial compression with the aim of analyzing the luminescence properties related to intrinsic structural defects like dislocations. Plastic deformation greatly decreases the overall PL response, near-band-edge luminescence as well as deep level-related emissions. Results indicate a close relationship between the so-called Y1 and Y2 bands and the density of generated dislocations. Plastic deformation also produces an emission band at 603 nm whose intensity is proportional to the amount of introduced deformation.
Annealing-induced Changes in the Electronic and Structural Properties of ZnTe Substrates
The aim of this study is to demonstrate that the electronic and structural properties of II–VI substrates, here ZnTe, can be dramatically affected by thermal heating at temperatures in the range of those typically used in the epitaxial metalorganic chemical vapor deposition processes. Photoluminescence response shows that annealing at these temperatures produces a reduction of the sample crystalline quality, decreasing the free exciton emission relative to the deep level related one. Some factors, like the change in the charge and stress state of dislocations, Cu diffusion, and oxygen incorporation, could be responsible for changes in the substrate properties, which can produce stresses and…