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Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
3 figuras, 3 páginas.
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaAs upper confining layers. Owing to these particular design and growth parameters, quantum dot densities are in the order of 4-5x109 cm-2 with emission wavelengths ranging from 1.20 to 1.33 µm at 10 K, features that make these structures interesting for single-photon operation at telecom wavelength. High resolution structural techniques show that In content and composition profiles in the structures depend on …