6533b7defe1ef96bd12766b1
RESEARCH PRODUCT
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
SeravalliLuca 1TrevisiGiovanna 1FrigeriPaola 1RivasDavid 2Munoz-matutanoGuillermo 2SuarezIsaac 2AlenBenito 2Canet-ferrerJosep 2Martinez-pastorJuan 2subject
Molecular beam epitaxial growthPhotoluminescenceMaterials sciencePhotonIII-V semiconductorsPhysics and Astronomy (miscellaneous)ExcitonInAs/GaAs Quantum DotsPhysics::OpticsSemiconductor growthEpitaxyNanofabricationGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials ScienceAtomic force microscopyGallium arsenideIndium compoundsSemiconductor quantum dotsPhotoluminescencebusiness.industryNanostructured materialsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectNanolithographychemistryQuantum dotOptoelectronicsExcitonsbusinessTelecommunicationsMolecular beam epitaxydescription
3 figuras, 3 páginas.
year | journal | country | edition | language |
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2011-01-01 |