Search results for "Excitons"
showing 10 items of 32 documents
Light-induced transmission nonlinearities in gallium selenide
1999
The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures. Chantal.Ferrer@uv.es ; Jaqueline.Bouvier@uv.es ; Miguel.Andres@…
Investigation of molecular dimers by ensemble and single molecule spectroscopy
2002
International audience; We have investigated molecular dimers with different electronic coupling strengths by bulk and single molecule spectroscopy. In one of the dimers the two monomers (perylene-monoimide) are directly connected via a single bond while in the other one they are separated by the benzil motif. The close proximity of the monomers in the first case gives rise to excitonic band splitting which is clearly observable in the bulk absorption spectra. For the benzil structure the electronic interactions are governed by Förster-type energy hopping between the monomers. Fluorescence intensity trajectories at the single molecule level show one-step and two-step bleaching behaviour whi…
Evidence of delocalized excitons in amorphous solids
2010
We studied the temperature dependence of the absorption coefficient of amorphous ${\mathrm{SiO}}_{2}$ in the range from 8 to 17.5 eV obtained by Kramers-Kronig dispersion analysis of reflectivity spectra. We demonstrate the main excitonic resonance at 10.4 eV to feature a close Lorentzian shape redshifting with increasing temperature. This provides a strong evidence of excitons being delocalized notwithstanding the structural disorder intrinsic to amorphous ${\mathrm{SiO}}_{2}$. Excitons turn out to be coupled to an average phonon mode of 83 meV energy.
Room temperature polariton luminescence from a GaN∕AlGaN quantum well microcavity
2006
The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak reflectivity of 99.5% and SiO2/Si3N4 DBRs were used to form high finesse hybrid microcavities. State-of-the-art GaN/Al0.2Ga0.8N QWs emitting at 3.62 eV with a linewidth of 45 meV at 300 K were inserted in these structures. For a 3 lambda/2 microcavity containing six QWs, the interaction between cavity photons and QW excitons is sufficiently large to reach the strong coupling regime. A polariton luminescence is observed with a vacuum field Rabi…
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
2001
Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…
Transport properties of nitrogen doped p‐gallium selenide single crystals
1996
Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…
Colloidal Nanoplatelet/Conducting Polymer Hybrids: Excitonic And Material Properties
2016
WOS:000370678700053 Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe nanoplatelets, which are atomically flat semiconductor nanocrystals. Hybridization of the polymers with the nanoplatelets in the solution phase was observed to cause strong photoluminescence quenching in both materials. Through steady-state photoluminescence and excitation spectrum measurements, photoluminescence quenching was shown to result from dominant exciton dissociation through charge transfer at the polymer/nanoplatelet interfaces that possess a sta…
Thermal activated carrier transfer between InAs quantum dots in very low density samples
2010
In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/¼m2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Exciton interaction with Ce3+ and Ce4+ ions in (LuGd)3(Ga,Al)5O12 ceramics
2021
The authors acknowledge the expert help of the staff of MAX IV Laboratory. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. I.V. acknowledges the support of Russian Foundation for Basic Research # 20-52-S52001.