6533b827fe1ef96bd128656d
RESEARCH PRODUCT
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
Ch. GuenaudEmmanuelle DeleporteLuisa GonzálezG. AragónJuan P. Martínez-pastorsubject
III-V semiconductorsPhotoluminescenceMaterials scienceBand gapExcitonAlloyGeneral Physics and Astronomyengineering.materialGallium arsenideSpectral line broadeningchemistry.chemical_compoundCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Optical constantsInterface structureFluctuationsSemiconductor quantum wellsPhotoluminescenceQuantum wellCondensed matter physicsCondensed Matter::OtherGallium compoundsUNESCO::FÍSICAHeterojunctionInterface statesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStoichiometryEnergy gapchemistryIndium compounds ; Gallium compounds ; III-V semiconductors ; Gallium arsenide ; Semiconductor quantum wells ; Interface structure ; Photoluminescence ; Excitons ; Interface states ; Fluctuations ; Stoichiometry ; Spectral line broadening ; Energy gap ; Optical constantsengineeringExcitonsMolecular beam epitaxydescription
9 páginas, 11 figuras.
year | journal | country | edition | language |
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1998-12-15 |