0000000000433165
AUTHOR
Hanna Hakola
Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
Impurities in aluminum nitride films prepared by plasma enhanced atomic layer deposition using NH3-, N2/H2- and N2-based plasmas are investigated by combining time-of-flight elastic recoil detection analysis (ERDA) and Fourier transform infrared spectroscopy. Different atomistic growth mechanisms are found to exist between the plasma chemistries. N2-plasma is shown as not suitable for the low-temperature deposition of AlN. Films deposited by NH3- and N2/H2-based processes are nitrogen rich and heavily hydrogenated. Carbon impurities exist at higher concentrations for the N2/H2-processes. The discovery of nitrile groups in the films indicates that carbon impurities can be partially attribute…
Photo-induced electron transfer at nanostructured semiconductor–zinc porphyrin interface
Abstract Electron transfer at metal oxide–organic dye interface on ZnO nanorod (ZnOr) templates was studied by femtosecond absorption spectroscopy method. Further confirmation of the electron transfer was obtained from photoelectrical studies. The fastest electron transfer from zinc porphyrin (ZnP) to semiconductor was observed for ZnOr modified by a 5 nm layer of TiO2 (