Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers

Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.

40 GHz Monolithic Integrated 1.3 µm InGaAlAs-InP Laser-Modulator with Double-Stack MQW Layer Structure