0000000000447146

AUTHOR

C. Pettenkofer

showing 2 related works from this author

Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

1999

Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…

Materials scienceAnalytical chemistryIonisation potentialGeneral Physics and AstronomyWork functionPhotoelectron spectrasymbols.namesakeX-ray photoelectron spectroscopyIndium compounds:FÍSICA [UNESCO]Electron affinityWork functionThin filmbusiness.industryFermi levelUNESCO::FÍSICAHeterojunctionInterface statesBand structureEvaporation (deposition)X-ray diffractionElectron affinitySemiconductorVacuum depositionIndium compounds ; Vacuum deposition ; X-ray diffraction ; Photoelectron spectra ; Semiconductor-insulator boundaries ; Work function ; Fermi level ; Ionisation potential ; Electron affinity ; Interface states ; Band structureFermi levelsymbolsSemiconductor-insulator boundariesOptoelectronicsbusiness
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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

2001

Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…

Materials scienceBand gapExcitonIndium compounds ; III-VI semiconductors ; Semiconductor epitaxial layers ; Electroabsorption ; Excitons ; Minority carriers ; Carrier lifetimeCarrier lifetimeGeneral Physics and Astronomychemistry.chemical_elementIII-VI semiconductorschemistry.chemical_compoundIndium compounds:FÍSICA [UNESCO]SelenideThin filmMinority carriersbusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICACarrier lifetimeCopper indium gallium selenide solar cellschemistryElectroabsorptionOptoelectronicsExcitonsbusinessSingle crystalIndium
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