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RESEARCH PRODUCT
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
C. PettenkoferJuan F. Sánchez-royoAndreas KleinWolfram JaegermannO. LangAlfredo Segurasubject
Materials scienceAnalytical chemistryIonisation potentialGeneral Physics and AstronomyWork functionPhotoelectron spectrasymbols.namesakeX-ray photoelectron spectroscopyIndium compounds:FÍSICA [UNESCO]Electron affinityWork functionThin filmbusiness.industryFermi levelUNESCO::FÍSICAHeterojunctionInterface statesBand structureEvaporation (deposition)X-ray diffractionElectron affinitySemiconductorVacuum depositionIndium compounds ; Vacuum deposition ; X-ray diffraction ; Photoelectron spectra ; Semiconductor-insulator boundaries ; Work function ; Fermi level ; Ionisation potential ; Electron affinity ; Interface states ; Band structureFermi levelsymbolsSemiconductor-insulator boundariesOptoelectronicsbusinessdescription
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignment with ΔEV = 2.05 eV, ΔEC = 0.29 eV, and an interface dipole of δ = −0.55 eV. Juan.F.Sanchez@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1999-11-15 |