0000000000451270

AUTHOR

P.m. Peterlé

showing 3 related works from this author

Surface preparation influence on the initial stages of MOCVD growth of TiO2 thin films

2006

In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS), completed by ex situ atomic force microscopy (AFM) analyses, were performed in order to compare the initial stages of MOCVD growth of TiO 2 thin films on two different surface types. The first type was a silicon native oxide free hydrogen terminated surface and the second one was a silicon dioxide surface corresponding to a thin layer of 3.5 nm thick in situ thermally grown on silicon substrate. Si(100) was used as substrate, and the growths of TiO 2 thin films were achieved with titanium tetraisopropoxide (TTIP) as precursor under a temperature of 675 °C, a pressure of 0.3 Pa and a deposition time of 1 h. Whate…

Silicontechnology industry and agricultureMetals and AlloysAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesSubstrate (electronics)Chemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundSurface coatingchemistryTitanium dioxideMaterials ChemistryThin filmLayer (electronics)TitaniumThin Solid Films
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Elaboration and characterization of barium silicate thin films.

2008

International audience; Room temperature depositions of barium on a thermal silicon oxide layer were performed in ultra high vacuum (UHV). In-situ X-ray photoelectron spectroscopy (XPS) analyses were carried out as well after exposure to air as after subsequent annealings. These analyses were ex-situ completed by secondary ion mass spectrometry (SIMS) profiles and transmission electron microscopy (TEM) cross-sectional images. The results showed that after air exposure, the barium went carbonated. Annealing at sufficient temperature permitted to decompose the carbonate to benefit of a barium silicate. The silicate layer was formed by interdiffusion of barium with the initial SiO2 layer.

Materials scienceAnnealing (metallurgy)Ultra-high vacuumAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology01 natural scienceschemistry.chemical_compoundIn-situ analysesX-ray photoelectron spectroscopyStructural Biology0103 physical sciencesXPSGeneral Materials ScienceThin filmBarium silicateSilicon oxide010302 applied physicstechnology industry and agricultureBariumCell Biology021001 nanoscience & nanotechnologySilicateSecondary ion mass spectrometrychemistry0210 nano-technology
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Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses

2005

Abstract In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS) were performed to understand the initial stages of TiO 2 thin-film MOCVD growth. Deposits on Si (1 0 0), a few nanometres thick, were obtained at a fixed temperature of 650 °C and for two different pressures, 2.9 and 0.05 mbar, using titanium tetraisopropoxide (TTIP) as precursor. Pressure lowering led to a higher deposit growth rate. Reduction of titanium with respect to stoichiometric titanium dioxide and oxidation of the wet-cleaned silicon substrate are observed from decomposition of the Ti 2p and Si 2p peaks. The formation of a TiSi x O y mixed oxide is also pointed out and confirmed by the presence…

Materials scienceSilicontechnology industry and agricultureAnalytical chemistrychemistry.chemical_elementSubstrate (electronics)Condensed Matter PhysicsInorganic Chemistrychemistry.chemical_compoundchemistryX-ray photoelectron spectroscopyTitanium dioxideMaterials ChemistryMixed oxideMetalorganic vapour phase epitaxyThin filmTitaniumJournal of Crystal Growth
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