0000000000462062
AUTHOR
Pierre Wang
Effects of high-energy electrons in advanced NAND flash memories
We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.
Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation
International audience; Functional verification schemes at a level different from component-level testing are emerging as a cost-effective tool for those space systems for which the risk associated with a lower level of assurance can be accepted. Despite the promising potential, system-level radiation testing can be applied to the functional verification of systems under restricted intrinsic boundaries. Most of them are related to the use of hadrons as opposed to heavy ions. Hadrons are preferred for the irradiation of any bulky system, in general, because of their deeper penetration capabilities. General guidelines about the test preparation and procedure for a high-level radiation test ar…