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RESEARCH PRODUCT

Effects of high-energy electrons in advanced NAND flash memories

Alessandra CostantinoPierre WangSimone GerardinVeronique Ferlet-cavroisHeikki KettunenMarta BagatinAri VirtanenAlessandro Paccagnella

subject

NeutronsHigh energyRadiationElectron energy010308 nuclear & particles physicsComputer sciencebusiness.industryNAND gateAlpha Particles; Flash; Neutrons; Radiation Effects; Single Event Upset; Electrical and Electronic Engineering; RadiationElectronAlpha Particles01 natural sciencesThreshold voltageRadiation EffectsFlash (photography)Error analysisAbsorbed dose0103 physical sciencesElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringFlashbusinessSingle Event Upset

description

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

yearjournalcountryeditionlanguage
2016-09-012016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
https://doi.org/10.1109/radecs.2016.8093108