0000000000462061

AUTHOR

Alessandra Costantino

showing 2 related works from this author

Effects of high-energy electrons in advanced NAND flash memories

2016

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

NeutronsHigh energyRadiationElectron energy010308 nuclear & particles physicsComputer sciencebusiness.industryNAND gateAlpha Particles; Flash; Neutrons; Radiation Effects; Single Event Upset; Electrical and Electronic Engineering; RadiationElectronAlpha Particles01 natural sciencesThreshold voltageRadiation EffectsFlash (photography)Error analysisAbsorbed dose0103 physical sciencesElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringFlashbusinessSingle Event Upset2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2017

Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed

protonitNuclear and High Energy PhysicsProtonfloating gate devicesNAND gateFlash memories01 natural sciencesComputer Science::Hardware ArchitectureIonizationFlash memories; floating gate devices; protons; single event effects; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering0103 physical sciencesHardware_ARITHMETICANDLOGICSTRUCTURESElectrical and Electronic Engineeringflash-muistit010302 applied physicsPhysicsRange (particle radiation)ta114ta213protons010308 nuclear & particles physicsbusiness.industryElectrical engineeringsingle event effectsNon-volatile memoryNuclear Energy and EngineeringLogic gateAtomic physicsbusinessEvent (particle physics)Energy (signal processing)IEEE Transactions on Nuclear Science
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