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RESEARCH PRODUCT
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
Marta BagatinAli ZadehAngelo ViscontiHeikki KettunenVeronique Ferlet-cavroisAri VirtanenAlessandra CostantinoAlessandro PaccagnellaSimone Gerardinsubject
protonitNuclear and High Energy PhysicsProtonfloating gate devicesNAND gateFlash memories01 natural sciencesComputer Science::Hardware ArchitectureIonizationFlash memories; floating gate devices; protons; single event effects; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering0103 physical sciencesHardware_ARITHMETICANDLOGICSTRUCTURESElectrical and Electronic Engineeringflash-muistit010302 applied physicsPhysicsRange (particle radiation)ta114ta213protons010308 nuclear & particles physicsbusiness.industryElectrical engineeringsingle event effectsNon-volatile memoryNuclear Energy and EngineeringLogic gateAtomic physicsbusinessEvent (particle physics)Energy (signal processing)description
Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-01-01 | IEEE Transactions on Nuclear Science |